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PATACON PC-cluster for LEEPL
PATACON PC-cluster | for EPL | for LEEPL | for EBDW

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Convert semiconductor mask design data to manufacturing data for LEEPL stepper.

PATACON PC-cluster For LEEPL is a software product for converting semiconductor mask design data to manufacturing data for LEEPL stepper.

Since LEEPL mask has different structure from that of photo mask, this software has specialized functions showed below to deal with data conversion for LEEPL.
PATACON PC-cluster
Functions for LEEPL data conversion
1 Pattern Check
There are two ways for LEEPL mask making, using single membrane mask or complementary masks. If there is no dangerous pattern (doughnut, leaf, long-thin, or large-area), single membrane mask can be used. By pattern check function, you can confirm non-existence of dangerous patterns, or can detect dangerous patterns in input data. If single membrane mask can not be used, complementary masks are applied, with splitting dangerous patterns.
 
2 Complementary division
Doughnut, long-line, leaf, and large area patterns are not allowed in making stencil mask. Therefore, such patterns are divided into two or more parts which are not dangerous to stencil mask. Each divided pattern is distributed to complementary membranes. The remaining patterns, which are not divided, are also distributed to separate adjoining patterns.
3 Stitching
Not to make a slit by Complementary division, a supplementary pattern-overlapping can be added to the joint. The following shapes are available in stitching. (1) Rectangle (Simple extension) (2) Trapezoid - Several definition are available, according to the width of divided edge.- When division is performed in the middle of a line, both of the divided patterns are added by the half length of the specification.- When division is performed on the junction of 'T' or 'L', only the stem pattern is extended. Extension of long line pattern's edge is also available.
 
4 Stress distortion correction
This function presumes pattern shift caused by gravity or mask stress, and correct pattern position in advance.
Correction is applied in the following two cases.
1 : Pattern shift caused by the stress on the whole mask.
2 : Pattern shift caused by the stress distribution from aperture area in membrane.
5 Alignment mark insertion
The following two alignment marks can be inserted into the membrane area.
- The mark for rough adjustment (Coarse mark)
- The mark for detail adjustment (Fine mark)
 
6 Mask inspection data generation
Data for the mask inspection system for LEEPL can be output, in EB data format.
7 Verification
Perform verification (detection of pattern missing/overlapping) by comparing the EB data with original CAD data.
   

Product Features Deployment Guide Contact Us Brochure (PDF)


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